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HVPE Gallium Nitride GaN Wafer , Gan Chip Free Standing 10 x 10 mm Size

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HVPE Gallium Nitride GaN Wafer , Gan Chip Free Standing 10 x 10 mm Size

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Brand Name : zmsh

Model Number : GaN-001

Place of Origin : CHINA

MOQ : 1pcs

Price : by case

Payment Terms : L/C, , T/T

Supply Ability : 10PCS/month

Delivery Time : 2-4weeks

Packaging Details : single wafer case in 100-grade cleaning room

Material : GaN single crystal

Industry : Semiconductor wafer,LED

Application : semiconductor device,LD wafer,LED wafer, explorer detector,laser,

TYPE : HVPE template

customized : ok

SIZE : 10X10,5X5,20X20,30X30,DIA45MM,

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2inch HVPE method Gallium Nitride GaN wafer ,free standing GaN substrates for LD,10x10mm size GaN chips,HVPE GaN wafer

About GaN Feature Introduce

The growing demand for high-speed, high-temperature and high power-handling capabilities has madethe semiconductor industry rethink the choice of materials used as semiconductors. For instance,

as various faster and smaller computing devices arise, the use of silicon is making it difficult to sustain Moore’s Law. But also in power electronics, So GaN semiconductor wafer is grown out for the need.

Due to its unique characteristics (high maximum current, high breakdown voltage, and high switching frequency), Gallium Nitride GaN is the unique material of choice to solve energy problems of the future. GaN based systems have higher power efficiency, thus reducing power losses, switch at higher frequency, thus reducing size and weight.

GaN technology is used in numerous high-power applications such as industrial, consumer and server power supplies, solar, AC drive and UPS inverters, and hybrid and electric cars. Furthermore,

GaN is ideally suited for RF applications such as cellular base stations, radars and cable TV

infrastructure in the networking, aerospace and defense sectors, thanks to its high breakdown strength,low noise figure and high linearity.

Specifications for GaN Substrates

2”GaN Substrates
Item GaN-FS-N GaN-FS-SI
Dimensions Ф 50.8mm ± 1mm
Marco Defect Density A Level ≤ 2 cm-2
B Level > 2 cm-2
Thickness 330 ± 25 µm
Orientation C-axis(0001) ± 0.5°
Orientation Flat (1-100) ± 0.5°, 16.0 ± 1.0mm
Secondary Orientation Flat (11-20) ± 3°, 8.0 ± 1.0mm
TTV(Total Thickness Variation) ≤15 µm
BOW ≤20 µm
Conduction Type N-type Semi-Insulating
Resistivity(300K) < 0.5 Ω·cm >106 Ω·cm
Dislocation Density Less than 5x106 cm-2
Useable Surface Area > 90%
Polishing Front Surface: Ra < 0.2nm. Epi-ready polished
Back Surface: Fine ground
Package Packaged in a class 100 clean room environment, in single wafer containers, under a nitrogen atmosphere.

P-GaN on Sapphire

Growth MOCVD / HVPE
Conductivity P type
Dopant Mg
Concentration > 5E17 cm-3
Thickness 1 ~ 5 um
Resistivity < 0.5 ohm-cm
Substrate Ø 2" / Ø 3" / Ø 4" Sapphire wafer

HVPE Gallium Nitride GaN Wafer , Gan Chip Free Standing 10 x 10 mm Size

Applications

  1. - Various LED's: white LED, violet LED, ultraviolet LED, blue LED
  2. - Environmental detection
  3. Substrates for epitaxial growth by MOCVD etc
  4. - Laser diodes: violet LD, green LD for ultra small projectors.
  5. - Power electronic devices
  6. - High frequency electronic devices
  7. Laser Projection Display, Power Device, etc.
  8. Date storage
  9. Energy-efficient lighting
  10. High- Efficiency Electronic devices
  11. New energy solor hydrogen technology
  12. Light source terahertz band

HVPE Gallium Nitride GaN Wafer , Gan Chip Free Standing 10 x 10 mm Size

HVPE Gallium Nitride GaN Wafer , Gan Chip Free Standing 10 x 10 mm Size


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