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4H-SEMI Polished Sic Wafer lens 2INCH 3INCH 4INCH 9.0 Hardness For Device Material

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4H-SEMI Polished Sic Wafer lens 2INCH 3INCH 4INCH 9.0 Hardness For Device Material

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Brand Name : zmsh

Model Number : sic-6inch 4h-n

Place of Origin : china

MOQ : 1pcs

Price : by case

Delivery Time : 15days within

Packaging Details : by customized case

industry : semiconductor substrate

materials : sic crystal

application : 5G, device material, MOCVD,power electronics

Type : 4H-N,semi ,No doped

color : green,blue, white

hardeness : 9.0 up

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6inch sic substrates, sic ingot ,sic crystal ingots ,sic crystal block, sic semiconductor substrates,6inch Silicon Carbide Wafer,4H-semi SiC wafer,6inch 4H-N type dummy grade sic wafer for test,
1. Description
Property 4H-SiC, Single Crystal 6H-SiC, Single Crystal
Lattice Parameters a=3.076 Å c=10.053 Å a=3.073 Å c=15.117 Å
Stacking Sequence ABCB ABCACB
Mohs Hardness ≈9.2 ≈9.2
Density 3.21 g/cm3 3.21 g/cm3
Therm. Expansion Coefficient 4-5×10-6/K 4-5×10-6/K
Refraction Index @750nm

no = 2.61

ne = 2.66

no = 2.60

ne = 2.65
Dielectric Constant c~9.66 c~9.66
Thermal Conductivity (N-type, 0.02 ohm.cm)

a~4.2 W/cm·K@298K

c~3.7 W/cm·K@298K
Thermal Conductivity (Semi-insulating)

a~4.9 W/cm·K@298K

c~3.9 W/cm·K@298K

a~4.6 W/cm·K@298K

c~3.2 W/cm·K@298K
Band-gap 3.23 eV 3.02 eV
Break-Down Electrical Field 3-5×106V/cm 3-5×106V/cm
Saturation Drift Velocity 2.0×105m/s 2.0×105m/s
2. Material Size describtion
6 inch diameter Silicon Carbide (SiC) Substrate Specification
Grade Z grade P grade R grade D grade
　 　 　 　
ZERO MPD Production Research Grade Dummy Grade
　 　 　 　
Diameter 150mm±0.5 mm
Thickness 350 μm±25μm or 500±25um or by customized size
Wafer Orientation Off axis : 4.0° toward <1120 > ±0.5° for 4H-N
Micropipe Density ≤1cm-2 ≤5 cm-2 ≤15 cm-2 ≤50 cm-2
Resistivity 4H-N 0.015~0.028 Ω·cm
4/6H-SI >1E5 Ω·cm
Primary Flat {10-10}±5.0°
Primary Flat Length 47.5mm±2.5 mm
Edge exclusion 3mm
TTV/Bow /Warp ≤15μm /≤40μm /≤60μm
Roughness Polish Ra≤1 nm
CMP Ra≤0.5 nm
None None 1 allowed, ≤1 mm
Cracks by high intensity light
Hex Plates by high intensity light Cumulative area≤1 % Cumulative area≤1 % Cumulative area≤3 %
None Cumulative area≤2 % Cumulative area≤5%
Polytype Areas by high intensity light
　
3 scratches to 1×wafer diameter cumulative length 5 scratches to 1×wafer diameter cumulative length 8 scratches to 1×wafer diameter cumulative length
Scratches by high intensity light
　
Edge chip None 3 allowed, ≤0.5 mm each 5 allowed, ≤1 mm each
Contamination by high intensity light None
3. products
4H-SEMI Polished Sic Wafer lens 2INCH 3INCH 4INCH 9.0 Hardness For Device Material4H-SEMI Polished Sic Wafer lens 2INCH 3INCH 4INCH 9.0 Hardness For Device Material

FAQ:

Q: What's the way of shipping and cost?

A:(1) We accept DHL, Fedex, EMS etc.

(2) it is fine If you have your own express account ,If not,we could help you ship them and

Freight is in accordance with the actual settlement.

Q: How to pay?

A: T/T 100％ deposit before delivery.

Q: What's your MOQ?

A: (1) For inventory, the MOQ is 1pcs. if 2-5pcs it's better.

(2) For customized commen products, the MOQ is 10pcs up.

Q: What's the delivery time?

A: (1) For the standard products

For inventory: the delivery is 5 workdays after you place the order.

For customized products: the delivery is 2 -4 weeks after you order contact.

Q: Do you have standard products?

A: Our standard products in stock. as like substrates 4inch 0.35mm.

Thanks~~~

Product Tags:

sic wafer

      

sic substrate

      
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