High crystal quality for demanding power electronics
As transportation, energy and industrial markets evolve, demand for reliable, high performance power electronics continues to grow. To meet the needs for improved semiconductor performance, device manufacturers are looking to wide bandgap semiconductor materials, such as our 4H SiC Prime Grade of 4H n -type silicon carbide (SiC) wafers.
Reliable and Ready
ZMSH offer device manufacturers a consistent, high quality substrate for developing high-performance power devices. Our SiC substrates are produced from crystal ingots of the highest quality using proprietary state-of-the art physical vapor transport (PVT) growth techniques . Advanced wafer manufacturing techniques are used to convert ingots into wafers to ensure the consistent, reliable quality you need.
Key features
- Optimizes targeted performance and total cost of ownership for next generation power electronics devices
- Large diameter wafers for improved economies of scale in semiconductor manufacturing
- Range of tolerance levels to meet specific device fabrication needs
- High crystal quality
- Low defect densities
Sized for improved production
With the 150 mm wafer size, we offer manufacturers the ability to leverage improved economies of scale compared with 100 mm device fabrication. Our 150 mm SiC Wafers offer consistently excellent mechanical characteristics to ensure compatibility with existing and developing device fabrication processes.
Customized to meet your needs
Our SiC material can be customized to meet the performance and cost requirements of device design needs. We have the capability to produce high quality wafers for next generation devices with low defect densities as low as MPD ≤ 0.1 cm -2, TSD ≤ 400 cm- 2 and BPD ≤ 1,500 cm -2.
Learn more from our technical PDF on 150 mm Silicon Carbide Wafers
| Property | 4H-SiC, Single Crystal | 6H-SiC, Single Crystal |
| Lattice Parameters | a=3.076 Å c=10.053 Å | a=3.073 Å c=15.117 Å |
| Stacking Sequence | ABCB | ABCACB |
| Mohs Hardness | ≈9.2 | ≈9.2 |
| Density | 3.21 g/cm3 | 3.21 g/cm3 |
| Therm. Expansion Coefficient | 4-5×10-6/K | 4-5×10-6/K |
| Refraction Index @750nm | no = 2.61
ne = 2.66 | no = 2.60
ne = 2.65 |
| Dielectric Constant | c~9.66 | c~9.66 |
| Thermal Conductivity (N-type, 0.02 ohm.cm) | a~4.2 W/cm·K@298K
c~3.7 W/cm·K@298K | |
| Thermal Conductivity (Semi-insulating) | a~4.9 W/cm·K@298K
c~3.9 W/cm·K@298K | a~4.6 W/cm·K@298K
c~3.2 W/cm·K@298K |
| Band-gap | 3.23 eV | 3.02 eV |
| Break-Down Electrical Field | 3-5×106V/cm | 3-5×106V/cm |
| Saturation Drift Velocity | 2.0×105m/s | 2.0×105m/s |
Q: What's the way of shipping and cost?
(1) We accept DHL, Fedex, TNT, UPS, EMS, SF and etc.
(2) If you have your own express account, it's great.
Q: How to pay?
(1) T/T, PayPal, West Union, MoneyGram and
Assurance payment on and etc..
(2) Bank Fee: West Union≤USD1000.00),
T/T -: over 1000usd ,please by t/t
Q: What's the deliver time?
(1) For inventory: the delivery time is 5 workdays.
(2) For customized products: the delivery time is 7 to 25 workdays. According to the quantity.
Q: Can I customize the products based on my need?
Yes, we can customize the material, specifications and optical coating for your optical components based on your needs.
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10x10x0.5mm HPSI 1sp 2sp 4H-SEMI SIC Silicon Carbide Wafersubstrate Images
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