4Inch Silicon Carbide Sic wafer 4H-P Type Diameter 100mm Thickness 350 μm Prime Grade Research Grade
4H-P silicon carbide (SiC) is an important semiconductor material commonly used in high-temperature, high-frequency, and high-power electronic devices. 4H-SiC is a type of its crystal structure that has a hexagonal lattice structure. The wide bandgap (approx. 3.26 eV) allows it to operate in high temperature and high voltage environments. High thermal conductivity (about 4.9 W/m ·· K), superior to silicon, can effectively guide and dissipate heat. High thermal conductivity (about 4.9 W/m ·· K), superior to silicon, can effectively guide and dissipate heat. P-type doped silicon carbide has a low resistivity and is suitable for the construction of PN junctions. With the development of electric vehicles and renewable energy technologies, the demand for 4H-P type silicon carbide is expected to continue to grow, driving related research and technological advancements.
Features:
· Type: 4H-SiC crystal has a hexagonal lattice structure and provides excellent electrical characteristics.
· Wide bandgap: approx. 3.26 eV for high temperature and high frequency applications.
· P-type doping: P-type conductivity is obtained by doping elements such as aluminum, increasing the pore conductor concentration.
· Resistivity: Low resistivity, suitable for high power devices.
· High thermal conductivity: approx. 4.9 W/m·K, effective heat dissipation, suitable for high power density applications.
· High temperature resistance: It can work stably in high temperature environment.
· High hardness: Very high mechanical strength and toughness for harsh conditions.
· High breakdown voltage: Able to withstand higher voltages and reduce device size.
· Low switching loss: Good switching characteristics in high-frequency operation to improve efficiency.
· Corrosion resistance: Good corrosion resistance to a wide range of chemicals.
· Wide range of applications: suitable for electric vehicles, inverters, high-power amplifiers and other fields.
Technical Parameters:
Applications:
1. Power electronics
Power converters: For efficient power adapters and inverters for smaller size and higher energy efficiency.
Electric vehicles: Optimize power conversion efficiency in drive modules and charging stations for electric vehicles.
2. RF devices
Microwave amplifiers: Used in communication and radar systems to provide reliable high-frequency performance.
Satellite Communications: High-power amplifier for communication satellites.
3. High temperature applications
Sensor: A sensor used in extreme temperature environments, capable of stable operation.
Industrial equipment: equipment and instruments adapted to high temperature conditions.
4. Optoelectronics
LED technology: Used to improve luminous efficiency in specific short-wavelength LEDs.
Lasers: Efficient laser applications.
5. Power system
Smart Grid: Improving energy efficiency and stability in high-voltage direct current (HVDC) transmission and grid management.
6. Consumer Electronics
Fast charging device: A portable charger for electronic devices that improves charging efficiency.
7. Renewable energy
Solar inverter: Achieve higher energy conversion efficiency in photovoltaic systems.
Customization:
Our SiC substrate is available in the 4H-P type and is RoHS certified. The minimum order quantity is 10pc and the price is by case. The packaging details are customized plastic boxes. The delivery time is within 30 days and we accept T/T payment terms. Our supply ability is 1000pc/month. The SiC substrate size is 4inch. Place of origin is China.
Our services:
1. Factory direct manufacture and sell.
2. Fast, accurate quotes.
3. Reply to you within 24 working hours.
4. ODM: Customized design is avaliable.
5. Speed and precious delivery.
