6Inch Silicon Carbide Semi-insulating SiC Composite Substrate P Type N Type Single Polish Double Polish Production Grade
Semi-Insulating Silicon Carbide (SiC) composite substrate wafers are a new type of substrate materials for power electronics and RF microwave devices. Semi-insulating SiC composite substrates are widely used in power electronics, high-frequency microwave devices, optoelectronic devices and other fields. It is particularly suitable for the manufacture of high-performance microwave integrated circuits and power amplifiers. Compared with traditional silicon substrates, semi-insulating SiC composite substrates have higher insulation, thermal conductivity and mechanical strength, providing an ideal material basis for the development of a new generation of high-power, high-frequency electronic devices.
Features:
· High resistivity: Semi-insulating SiC wafers can reach resistivity in the order of 10^8-10^10 Ω·cm. This extremely high resistivity makes it possible to effectively isolate electronic devices from interfering with each other.
· Low dielectric loss: Semi-Insulating SiC wafers have an extremely low dielectric loss factor, typically less than 10^-4. This helps to reduce the energy loss of the device when operating at high frequencies.
· Excellent thermal conductivity: SiC materials have a high thermal conductivity and can effectively conduct the heat generated by the device. It helps to improve the thermal management performance of the device and improve the operating stability.
· High mechanical strength: Semi-Insulating SiC wafers have high hardness and flexural strength. It can withstand large mechanical stresses and is suitable for manufacturing high-reliability electronic devices.
· Good chemical stability: SiC materials have excellent chemical stability in high-temperature, chemically corrosive environments. It is beneficial to improve the service life of the device in harsh environments.
· Good compatibility with Si: The lattice constant and coefficient of thermal expansion of Semi-Insulating SiC wafers are similar to those of silicon. It helps to simplify the device manufacturing process and reduce manufacturing costs.
Technical Parameters:
Applications:
1. RF and microwave devices: Semi-Insulating SiC is ideal for manufacturing RF and microwave integrated circuits due to its low dielectric loss and high insulation. It can be applied to high-frequency microwave fields such as mobile communication base stations, radar systems, and satellite communications.
2. Power Electronics: Semi-Insulating SiC has excellent thermal conductivity and high temperature characteristics, which is beneficial for the fabrication of power semiconductor devices. It can be used to manufacture high-power electronic devices such as power amplifiers, switching power supplies, and power conversion.
3. Optoelectronics: Semi-Insulating SiC has radiation resistance and can be used to manufacture photodetector devices that operate in a radiation environment. It is used in aerospace, national defense and other fields with strict requirements for radiation resistance.
Customization:
Our SiC substrate is available in the Semi-insulating type and is RoHS certified. The minimum order quantity is 10pc and the price is by case. The packaging details are customized plastic boxes. The delivery time is within 30 days and we accept T/T payment terms. Our supply ability is 1000pc/month. The SiC substrate size is 6 inch. Place of origin is China.
Our services:
1. Factory direct manufacture and sell.
2. Fast, accurate quotes.
3. Reply to you within 24 working hours.
4. ODM: Customized design is avaliable.
5. Speed and precious delivery.
